Significado
Processo que consiste em criar defeitos cristalográficos em regiões distantes das regiões futuras dos dispositivos, para que estes sirvam de sorvedouros de impurezas tipo contaminantes.
Meaning
1: a controlled modification of the silicon crystal to draw impurities to the bulk, or to the back surface of the wafer. Contaminants are removed sufficiently far from the front surface, where the devices are built, to render their potential degrading effects negligible. 2: the process that immobilizes impurities at locations away from the region of the specimen to be investigated. (http://www.sematech.org...)
Exemplos de tradução
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These gettering and annealing processes are carefully controlled to occur at temperatures around 8,0°C.
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